In this paper we study the dependence of charge carrier mobility with temperature in polymeric TFTs, PTFTs, using an expression previously derived by us, which has the advantage with respect to previous expressions, that most model parameters represent physical device parameters. Upper gate PTFTs fa
Modeling of substrate-induced anisotropy in through-plane thermal behavior of polymeric thin films
โ Scribed by Jeong B. Lee; Mark G. Allen; Thomas C. Hodge; Sue Ann Bidstrup; Paul A. Kohl
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 551 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0887-6266
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โฆ Synopsis
Polymeric thin films are widely used in microelectronic applications for a variety of purposes. These films may possess completely isotropic material properties and yet still exhibit anisotropic effects due to the constraining influence of the substrate coupling into the film behavior via the film Poisson ratio. A theoretical model of this effect on the through-plane thermal properties of isotropic thin films for single layer (thin film rigidly clamped) and bilayer (thin film on substrate, e.g., silicon wafer) has been developed based on the assumption that the material follows Hooke's law in all directions. Finite element analyses using ANSYS 5.OA have also been performed to confirm theoretical results both for singlelayer and bilayer models. In the case of Poisson ratio of 0.5, the effective coefficient of thermal expansion (CTE) in the thickness direction can be as high as three times that of the unconstrained film.
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