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Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double-barrier heterostructures

✍ Scribed by Ragi, R.; da Nobrega, Rafael V.T.; Romero, Murilo A.


Book ID
121685605
Publisher
John Wiley and Sons
Year
2013
Tongue
English
Weight
496 KB
Volume
26
Category
Article
ISSN
0894-3370

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