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Modeling of InSb and InAs whiskers growth

✍ Scribed by I. Bolshakova; T. Moskovets; I. Ostrovskii; A. Ostrovskaya; A. Klimenko


Book ID
117627246
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
343 KB
Volume
10
Category
Article
ISSN
0927-0256

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We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n