Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector s
Modeling of Film Deposition for Microelectronic Applications
β Scribed by Stephen Rossnagel (Eds.)
- Publisher
- Academic Press, Elsevier
- Year
- 1996
- Leaves
- 294
- Series
- Thin Films 22
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Table of Contents
Content:
Contributors
Page ix
Preface
Pages xi-xiv
Stephen Rossnagel
Thin film microstructure and process simulation using SIMBAD Original Research Article
Pages 1-79
Michael J. Brett, Steven K. Dew, Tom J. Smy
Mathematical methods for thin film deposition simulations Original Research Article
Pages 81-115
S. Hamaguchi
A process model for sputter deposition of thin films using molecular dynamics Original Research Article
Pages 117-173,IN1-IN3
C.-C. Fang, V. Prasad, R.V. Joshi, F. Jones, J.J. Hsieh
Feature scale transport and reaction during low-pressure deposition processes Original Research Article
Pages 175-276
Timothy S. Cale, Vadali Mahadev
Author index
Pages 277-283
Subject index
Pages 285-290
π SIMILAR VOLUMES
GENERAL DESCRIPTION OF THE SERIES Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems. In order to be able to reflect the dev
<p>Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel line