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Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

✍ Scribed by Jin, Seonghoon; Fischetti, Massimo V.; Tang, Ting-wei


Book ID
120458164
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
609 KB
Volume
102
Category
Article
ISSN
0021-8979

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