Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance

✍ Scribed by M. Miralaie, M. Leilaeioun, K. Abbasian

• Book ID: 118816480
• Publisher: Springer US
• Year: 2012
• Tongue: English
• Weight: 699 KB
• Volume: 42
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-012-2315-z