✦ LIBER ✦

Modeling frequency dependence of GaAs MESFET characteristics

✍ Scribed by Conger, J.; Peczalski, A.; Shur, M.S.

Book ID: 119773927
Publisher: IEEE
Year: 1994
Tongue: English
Weight: 483 KB
Volume: 29
Category: Article
ISSN: 0018-9200
DOI: 10.1109/4.272098

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A low-frequency GaAs MESFET circuit mode

A low-frequency GaAs MESFET circuit model

✍ Scheinberg, N.; Bayruns, R.; Goyal, R. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 301 KB

Frequency-dependent characteristics of a

Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination

✍ Roy, N.S.; Pal, B.B.; Khan, R.U. 📂 Article 📅 2000 🏛 Optical Society of America 🌐 English ⚖ 320 KB

Modelling DC characteristics of dual-gat

Modelling DC characteristics of dual-gate GaAs MESFETs

✍ Minasian, R.A. 📂 Article 📅 1983 🏛 The Institution of Electrical Engineers ⚖ 631 KB

Modeling of frequency and temperature ef

Modeling of frequency and temperature effects in GaAs MESFETs

✍ Canfield, P.C.; Lam, S.C.F.; Allstot, D.J. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 683 KB

New modeling of GaAs MESFET's

✍ Hariu, T.; Takahashi, K.; Shibata, Y. 📂 Article 📅 1983 🏛 IEEE 🌐 English ⚖ 671 KB

Neural network modeling of GaAs IC mater

Neural network modeling of GaAs IC material and MESFET device characteristics

✍ Gregory L. Creech; Jacek M. Zurada 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 350 KB

This paper provides an overview of research focused on the utilization of neurocomputing technology to model critical in-process integrated circuit material and device characteristics. Artificial neural networks are employed to develop models of complex relationships between material and device char