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Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

โœ Scribed by Tomizawa, M.; Furuta, T.; Yokoyama, K.; Yoshii, A.

Book ID
115485626
Publisher
IEEE
Year
1989
Tongue
English
Weight
558 KB
Volume
36
Category
Article
ISSN
0018-9383

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For the first time an enhancement of weak localization by Andreev-reflection has been measured. This means that the interface between the Sn/Ti contacts and the two-dimensional electron gas (2DEG) in the GaAs/AIGaAsheterostructure is practically barrier-free. The effect can be depressed by increased