Modeling fast-transient defect evolution and carrier recombination in pulse-neutron-irradiated Si devices

✍ Scribed by S.M. Myers; W.R. Wampler; P.J. Cooper; D.B. King

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 184 KB
• Volume: 401-402
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.09.002