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Modeling Crystal Growth in a Diffusion Field Using Fully Faceted Interfaces

✍ Scribed by Andrew R. Roosen; Jean E. Taylor

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
817 KB
Volume
114
Category
Article
ISSN
0021-9991

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✦ Synopsis

We present a new computational model of crystal growth, in which the interface between liquid and solid is explicitly tracked, but the measurement of curvature is simplified through the assumption that the crystal is a polygon having a limited number of possible normal directions. This method has several advantages. Computations involving the motion of the interface are relatively fast as compared to "phase field" algorithms but, unlike many "curve tracking" methods, it is easy to detect and make topological changes. The computational algorithm is described, including a method for "shattering" interface edges. The effects of variations of both physical (surface energy, mobility) and non-physical (mesh size) computational parameters have been investigated and produce results consistent with theory. (C) 1994 Academic Press, Inc.

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