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Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

✍ Scribed by Ignacio Martin-Bragado; S. Tian; M. Johnson; P. Castrillo; R. Pinacho; J. Rubio; M. Jaraiz


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
553 KB
Volume
253
Category
Article
ISSN
0168-583X

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