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Modeling and simulation of GaN/Al0.3Ga0.7N new multilayer nano-heterostructure

✍ Scribed by P.A. Alvi; Sapna Gupta; M.J. Siddiqui; G. Sharma; S. Dalela

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
485 KB
Volume
405
Category
Article
ISSN
0921-4526

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On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures
✍ Z. Tekeli; M. GΓΆkΓ§en; Ş. AltΔ±ndal; S. Γ–zΓ§elik; E. Γ–zbay πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 608 KB

The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (e 0 ), dielectric loss (e 00 ), dielectric loss tangent (tan d) and real and imaginary part of electrical modulus (V 0 and M 00 ) of the (Ni/Au)/GaN/Al 0.3 Ga 0.7 N heterostructures have been inve