Modeling and Design Techniques for RF Power Amplifiers

✍ Scribed by Arvind Raghavan, Nuttapong Srirattana, Joy Laskar

• Publisher: Wiley-IEEE Press
• Year: 2008
• Tongue: English
• Leaves: 220
• Category: Library

✦ Synopsis

Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers

RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area.

Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes:

• Device modeling for CAD

• Empirical modeling of bipolar devices

• Scalable modeling of RF MOSFETs

• Power amplifier IC design

• Power amplifier design in silicon

• Efficiency enhancement of RF power amplifiers

The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.

✦ Table of Contents

MODELING AND DESIGN TECHNIQUES FOR RF POWER AMPLIFIERS......Page 5
CONTENTS......Page 7
Preface......Page 11
1 Introduction......Page 15
1.1 Semiconductor Technology and RF Power Amplifier Design......Page 16
1.2 Device Modeling......Page 17
1.3 Power Amplifier IC Design......Page 18
1.5 Modulation Schemes......Page 19
1.6 Circuit Simulation......Page 23
1.7 Load-Pull Measurements......Page 24
References......Page 27
2.1 Introduction......Page 29
2.2 Bipolar Junction and Heterojunction Bipolar Transistors......Page 30
2.3.1 The Ebers–Moll Model......Page 32
2.3.2 The Gummel–Poon Model......Page 34
2.3.3 The VBIC Model......Page 39
2.3.4 MEXTRAM......Page 43
2.3.5 HICUM......Page 46
2.4 MOSFET Device Physics......Page 49
2.5.1 The Level 1 Model......Page 52
2.5.3 BSIM......Page 54
2.5.4 The BSIM2 and HSPICE Level 28 Models......Page 57
2.5.5 BSIM3......Page 58
2.5.7 BSIM4......Page 59
References......Page 60
3.1.1 Modeling the HBT versus the BJT......Page 63
3.1.2 Parameter Extraction......Page 64
3.1.3 Motivation for an Empirical Bipolar Device Model......Page 65
3.1.5 Compatibility between Large- and Small-Signal Models......Page 67
3.2.1 Current Source Model......Page 68
3.2.2 Current Source Model Parameter Extraction......Page 70
3.2.3 Extraction of Intrinsic Capacitances......Page 72
3.2.4 Extraction of Base Resistance......Page 74
3.2.5 Parameter Extraction Procedure......Page 75
3.3 Temperature-Dependent InGaP/GaAs HBT Large-Signal Model......Page 77
3.4 Empirical Si BJT Large-Signal Model......Page 85
3.5 Extension of the Empirical Modeling Method to the SiGe HBT......Page 91
References......Page 97
4.1 Introduction......Page 101
4.1.1 NQS Effects......Page 102
4.1.3 Distributed Substrate Resistance......Page 103
4.2.1 Scalability of MOSFET Model......Page 105
4.2.2 Extraction of Small-Signal Model Parameters......Page 108
4.2.3 Scalable Substrate Network Modeling......Page 115
4.2.4 Modified BSIM3v3 Model......Page 130
References......Page 134
5.1 Introduction......Page 137
5.2 Power Amplifier Design Methodology......Page 138
5.3 Classes of Operation......Page 139
5.4 Performance Metrics......Page 146
5.5 Thermal Instability and Ballasting......Page 150
References......Page 152
6.1 Introduction......Page 155
6.2 A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier......Page 156
6.2.1 Circuit Design Considerations......Page 157
6.2.2 Analysis of Ballasting for SiGe HBT Power Amplifiers......Page 160
6.2.3 Harmonic Suppression Filter and Output Match Network......Page 162
6.2.4 Performance of the Power Amplifier Module......Page 164
6.3 RF Power Amplifier Design Using Device Periphery Adjustment......Page 167
6.3.1 Analysis of the Device Periphery Adjustment Technique......Page 169
6.3.2 1.9-GHz CMOS Power Amplifier......Page 171
6.3.3 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier......Page 176
6.3.4 Nonlinear Term Cancellation for Linearity Improvement......Page 180
References......Page 183
7.1 Introduction......Page 187
7.2.1 Envelope Elimination and Restoration......Page 188
7.2.3 The Doherty Amplifier Technique......Page 189
7.2.4 Chireix’s Outphasing Amplifier Technique......Page 190
7.3 The Classical Doherty Amplifier......Page 193
7.4.1 Principle of Operation......Page 195
7.4.2 Analysis of Efficiency......Page 200
7.4.3 Practical Considerations......Page 202
7.4.4 Measurement Results......Page 204
References......Page 212
Index......Page 213