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Model Parameterization of Nonlinear Devices Using Impedance Spectroscopy

✍ Scribed by Kowal, J.; Hente, D.; Sauer, D.U.


Book ID
114631357
Publisher
IEEE
Year
2009
Tongue
English
Weight
881 KB
Volume
58
Category
Article
ISSN
0018-9456

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Semiconductor nonlinear device modeling
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## Abstract Modeling and simulation of seminconductor devices requires solution of highly nonlinear equations, such as the Boltzmann transport, hydrodynamic, and drift‐diffusion equations. The conventional finite‐element method (FEM) and finite difference (FD) schemes always result in oscillatory r