A model of phosphorus clustering during high concentration diffusion in silicon is proposed and analyzed. The main feature of this model is the assumption that negatively charged phosphorus clusters can be formed. The formation of singly negatively charged clusters incorporating one phosphorus atom
β¦ LIBER β¦
Model of the pair phosphorus atom-interstitial silicon atom
β Scribed by A. R. Chelyadinskii; V. A. Burenkov
- Book ID
- 110118749
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 1998
- Tongue
- English
- Weight
- 59 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1063-7834
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