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MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications

✍ Scribed by M. Lemberger; F. Schön; T. Dirnecker; M. P. M. Jank; L. Frey; H. Ryssel; A. Paskaleva; S. Zürcher; A. J. Bauer


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
425 KB
Volume
13
Category
Article
ISSN
0948-1907

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