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MOCVD of CeF3 films on Si(100) substrates: synthesis, characterization and luminescence spectroscopy

✍ Scribed by Lo Nigro, Raffaella; Malandrino, Graziella; Fragal??, Ignazio L.; Bettinelli, Marco; Speghini, Adolfo

Book ID
120416792
Publisher
Royal Society of Chemistry
Year
2002
Tongue
English
Weight
252 KB
Volume
12
Category
Article
ISSN
0959-9428

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GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality