MOCVD-grown AlGaN/GaN heterostructures with high electron mobility

✍ Scribed by V. V. Lundin; E. E. Zavarin; A. I. Besulkin; A. G. Gladyshev; A. V. Sakharov; M. F. Kokorev; N. M. Shmidt; A. F. Tsatsul’nikov; N. N. Ledentsov; Zh. I. Alferov; R. Kakanakov

• Book ID: 110140378
• Publisher: Springer
• Year: 2004
• Tongue: English
• Weight: 45 KB
• Volume: 38
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1823068