✦ LIBER ✦
MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology
✍ Scribed by R. Gassilloud; F. Martin; C. Leroux; M. Hopstaken; X. Garros; M. Cassé; Gilles Reimbold; Thierry Billon; Daniel Bensahel
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 695 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0167-9317
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