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Mobility enhancement in a highly strained δ-doped In0.9 Ga0.1 P/In0.75 Ga0.25 As/In0.53 Ga0.47 As/InP heterostructure

✍ Scribed by R.T. Hsu; W. Lin; M.J. Kao; Y.H. Wu; W.C. Hsu

No coin nor oath required. For personal study only.

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