Mobility and transverse electric field effects in channel conduction of wrap-around-gate nanowire MOSFETs

✍ Scribed by Sharma, A.K.; Zaidi, S.H.; Lucero, S.; Brueck, S.R.J.; Islam, N.E.

• Book ID: 114448017
• Publisher: The Institution of Electrical Engineers
• Year: 2004
• Tongue: English
• Weight: 796 KB
• Volume: 151
• Category: Article
• ISSN: 1350-2409
• DOI: 10.1049/ip-cds:20040993