MIS hydrogen sensors containing LB film insulator layers

✍ Scribed by R. Shanley; B. O'Beirn; V. Casey; J.B. McMonagle

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 618 KB
• Volume: 2
• Category: Article
• ISSN: 0925-4005
• DOI: 10.1016/0925-4005(90)80009-o

✦ Synopsis

Langmuir-Blodgett

(LB) solid ultrathin films have been incorporated

as the insulator layer in Pd/ insulator/n-Si Schottky barrier diode metal-insulator-semiconductor (MIS) hydrogen sensors. The effects on device response and recovery of M-and Ilayer thickness, temperature, hydrogen concentration and ambient atmosphere are examined. Optimized devices, containing organic LB films, show better responses than conventional oxide-containing MIS sensors and are capable of withstanding extended exposure to temperatures of up to 180 "C. Sensitivities of 0.5 ppm or better are achieveable with good long-term operating stability.