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Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH3 plasma treatment

✍ Scribed by Po-Chun Huang; Lu-An Chen; Chen-Chia Chen; Jeng-Tzong Sheu


Book ID
113797912
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
645 KB
Volume
91
Category
Article
ISSN
0167-9317

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