✦ LIBER ✦

Minimization of sub-oxide transition regions at SiSiO2 interfaces by 900°C rapid thermal annealing

✍ Scribed by G. Lucovsky; A. Banerjee; B. Hinds; B. Claflin; K. Koh; H. Yang

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 357 KB
Volume: 36
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00049-x

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✦ Synopsis

Combining previously reported optical second harmonic generation (SHG) data with i) newlyreported X-ray photoelectron spectroscopy (XPS) data and ii) the Auger electron spectroscopy (AES) results presented in this paper demonstrates that interfacial sub-oxide bonding (SiOx, x<2) invariably results from rapid thermal or plasma-assisted oxidation at temperatures below 800°C, and is significantly reduced following a 30 s, 900°C RTA.