Miniband transport in vertical superlattice field effect transistors
β Scribed by R.A Deutschmann; W Wegscheider; M Rother; M Bichler; G Abstreiter
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 136 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1386-9477
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β¦ Synopsis
The non-equilibrium transport of electrons conΓΏned at an atomically sharp interface and subject to a periodic potential is studied. We ΓΏnd a pronounced negative di erential resistance, the magnitude of which increases with increasing modulation strength. The data is qualitatively consistent with the Esaki-Tsu transport model. We emphasize the signiΓΏcance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Additional features in the source-drain current are attributed to Bloch-phonon resonances.
π SIMILAR VOLUMES
A microscopic theory is presented for high-field miniband transport in a two-dimensional superlattice. The energy transfer to the lateral electron motion is taken into account as well as scattering on polar optical phonons. Oscillatory current anomalies appear when the optical phonon frequency is a
Miniband transport in semiconductor superlattices in high electric and magnetic fields aligned parallel to the symmetry axis is studied within a quantum-kinetic approach that accounts for intra-collisional field effects of both fields and the heating of the lateral electron motion. Scattering on aco
DC miniband transport is studied in undoped GaAs/AIXGal\_,As superlattices at low temperatures and at high magnetic fields applied perpendicular to the tunnel barriers. A strong suppression of miniband conduction is observed under these conditions. We propose a qualitative semi-classical Drude model