Millimetre-wave negative differential conductance in GaInAs/AlInAs semiconductor superlattices

✍ Scribed by C. Minot; N. Sahri; H. Le Person; J.F. Palmier; J.C. Harmand; J.P. Medus; J.C. Esnault

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 141 KB
• Volume: 23
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0247

✦ Synopsis

We report microwave and temporal measurements on nonlinear transport in GaInAs/AlInAs superlattice n + n -n + diodes. The superlattices have wide minibands, wider than 80 meV. The microwave experiments are performed for 0-65 GHz. The diodes exhibit reflection gain up to 65 GHz over a bias-dependent Hakki resonance. The temporal experiments use electro-optic sampling to push the measurement range beyond 200 GHz. Harmonics of the fundamental Hakki resonance are observed up to order three at 150 GHz. A simple admittance model for negative differential conductance devices accounts for the results in both experimental approaches. They are in agreement with miniband transport and demonstrate superlattice negative differential conductance far in the millimetre-wave domain.