Migratory aptitude of substituents on silicon atoms of disilylcarbenes
β Scribed by Akira Oku; Toshiyuki Miki; Yasuyoshi Ose
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 291 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0894-3230
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β¦ Synopsis
Photolysis of (dimethylphenylsilyl)(trimethylsilyl)diazomethane in t-BuOH yielded three different t-BuOsubstituted (silylalkyl)silanes. The migratory aptitude of substituents from the silicon atoms to the carbenic center was found to be in the order Ph:Me (on phenyl-substituted Si):Me (on TMS)=3.8: 1.0: 1.0, the opposite of that reported for monosilylcarbenes. The photolysis of (1-phenyl-1-silacyclobutyl)(trimethylsilyl) diazomethane gave two silyl-substituted silacyclobutanes and one ring-expanded silacyclopentane. Again, the migratory aptitude of substituents was in the order Ph : ring-methylene : Me = 4.5 : 1.4: 1.0, showing that the ring shifts faster than Me and also Ph shifts faster than any alkyl substituent.
π SIMILAR VOLUMES
## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a βFull Textβ option. The original article is trackable v
By means of the valence effective Hamiltonian VEH method, we calculated the electronic Ε½ . Ε½ . structure for a polymer containing poly para-phenylene vinylene PPV and Ε½ . Ε½ . dimethoxyαpoly para-phenylene PPP units as well as silicon atoms used as spacers. The equilibrium geometry was obtained by an