Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

✍ Scribed by Jain, R.; Sun, W.; Yang, J.; Shatalov, M.; Hu, X.; Sattu, A.; Lunev, A.; Deng, J.; Shturm, I.; Bilenko, Y.; Gaska, R.; Shur, M. S.

• Book ID: 121718624
• Publisher: American Institute of Physics
• Year: 2008
• Tongue: English
• Weight: 376 KB
• Volume: 93
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2969402