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Mid-wave infrared HgCdTe nBn photodetector

โœ Scribed by Itsuno, Anne M.; Phillips, Jamie D.; Velicu, Silviu


Book ID
118183107
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
1008 KB
Volume
100
Category
Article
ISSN
0003-6951

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Si-based normal incident mid-infrared photodetectors using Ge dots were investigated. P-I-P structures of boron-doped Ge dots embedded in the intrinsic region were grown using solid source molecular beam epitaxy. The dark current was strongly dependent on the doping level in Ge dot. The structure gr