Microwave Transistor Amplifiers: Analysis and Design, 2nd ed
β Scribed by Gonzalez G.
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- English
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No coin nor oath required. For personal study only.
β¦ Synopsis
Pearson, 1996. β 506 p.
A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) β using scattering parameters techniques. Key features: Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillators.β¦ Subjects
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A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) - using scattering parameters techniques.
A unified presentation of the analysis and design of microwave transistoramplifiers(and oscillators) using scattering parameters techniques.KEY FEATURES: Presents material on: transmission-lines concepts;power waves and generalized scattering parameters; measurements ofscattering parameters; bipolar
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers <br>This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include mod