## Abstract An application of artificial neural networks (ANNs) for accuracy improving of the microwave FETs (MESFET/HEMT, dualβgate MESFET) noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model, whose noise wave temperatures are assumed to be
Microwave noise modeling for PHEMT using artificial neural network technique
β Scribed by Xiuping Li; Jianjun Gao; Qi-Jun Zhang
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 528 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1096-4290
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