Microstructuring of As40S60 wafers exposed to soft X-rays

✍ Scribed by G. Danev; E. Spassova; J. Assa; P. Guttmann

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 358 KB
• Volume: 8
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199805/06)8:3<129::aid-amo331>3.0.co;2-5

✦ Synopsis

The possibilities of 'resistless' microstructuring of As 36.1 S 63.9 wafers by soft X-ray irradiation and wet alkaline etching have been investigated. Scanning electron microscopy is used to study the influence of the exposure and processing parameters on the depth and acuity of the patterned structures. Structures 1 m m m m mm wide are obtained by irradiation with an energy flux of 2000 mJ cm 72 , followed by etching in a solution of pH 10.8 at a temperature of 23 8C for a processing time of 18 min. It is established that by X-ray irradiation and suitable processing of As 36.1 S 63.9 wafers, microstructures of a depth up to 0.65 m m m m mm could be patterned. The structured wafers could be used as diffraction elements for IR optics. *