Microstructures and MR effects of transparent ferromagnetic chemically prepared Fe-Zn-O films

✍ Scribed by Shinagawa, T. ;Izaki, M. ;Inui, H. ;Murase, K. ;Awakura, Y.

• Book ID: 105364033
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 260 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200669600

✦ Synopsis

Abstract

Transparent ferromagnetic Fe–Zn–O films with an entire oxide system were prepared by chemical bath depositions followed by heat treatment. The Fe–Zn–O film was composed of two phases, where spinel‐type iron oxide particles of 20 nm in diameter were embedded in a wurtzite zinc oxide film with 240 nm thickness. The electrical properties evaluated by a Hall effects measuring system revealed that the film is an n‐type semiconductor with a resistivity of 2.6 Ω cm. The Fe–Zn–O film exhibited magnetic hysteresis at room temperature, and magnetic moment of 0.5__μ__ ~B~/Fe and coercive force of 172.5 Oe were observed. A negative magnetoresistance effect, probably due to a spin‐dependent scattering of carrier electrons, of about −0.35% in a 5 kOe magnetic field was detected at room temperature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)