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Microstructure and Electrical Properties of Tungsten-Doped Bismuth Titanate Ceramics

✍ Scribed by Zhang, Lina; Zhao, Suchuan; Yu, Hanfeng; Zheng, Liaoying; Li, Guorong; Yin, Qingrui


Book ID
124060343
Publisher
Institute of Pure and Applied Physics
Year
2004
Tongue
English
Weight
284 KB
Volume
43
Category
Article
ISSN
0021-4922

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πŸ“œ SIMILAR VOLUMES


Electrical properties of bismuth-doped n
✍ A.M.S. Correia; J.L. Baptista πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 349 KB

Pure and Bi-doped samples of SrTiO: with Sr/Ti ratios ranging from 0.980 to 1.010 were sintered in air at 1500 Β°C. Grain growth was promoted in the non-stoichiometric bismuth-doped compositions. Unlike the non-doped samples which were ohmic insulators, bismuth-containing specimens showed non-ohmic b