Electrical properties of bismuth-doped n
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A.M.S. Correia; J.L. Baptista
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Article
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1989
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Elsevier Science
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English
β 349 KB
Pure and Bi-doped samples of SrTiO: with Sr/Ti ratios ranging from 0.980 to 1.010 were sintered in air at 1500 Β°C. Grain growth was promoted in the non-stoichiometric bismuth-doped compositions. Unlike the non-doped samples which were ohmic insulators, bismuth-containing specimens showed non-ohmic b