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Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

✍ Scribed by L. Shi; Y. Yuan; X.F. Liang; Y.D. Xia; J. Yin; Z.G. Liu


Book ID
108060071
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
444 KB
Volume
253
Category
Article
ISSN
0169-4332

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