𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer

✍ Scribed by X.H. Luo; R.M. Wang; X.P. Zhang; H.Z. Zhang; D.P. Yu; M.C. Luo


Book ID
108210276
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
420 KB
Volume
35
Category
Article
ISSN
0968-4328

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Microstructure of N-face InN grown on Si
✍ Dimitrakopulos, G. P. ;Kehagias, Th. ;Ajagunna, A. ;Kioseoglou, J. ;Kerasiotis, πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 650 KB

## Abstract The structural properties of 2 ¡m thick N‐face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th