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Microscopic theory of excitonic effects in semiconductor inversion layers

✍ Scribed by G. Meissner; M. Voss

Publisher
Elsevier Science
Year
1982
Weight
39 KB
Volume
113
Category
Article
ISSN
0167-2584

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On the theory of excitons in semiconduct
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## Abstract The excitons in semiconductors with arbitrarily complex band structure are investigated within the framework of the effective mass approximation. The influence of homogeneous external fields on excitons is studied. The formulas for the coefficient of one‐photon and two‐photon absorption