Microscopic aspects of Si-Ge heterojunction formation
β Scribed by S. Nannarone; P. Perfetti; C. Quaresima; C. Quaresima; A. Savioa; C.M. Bertoni; C. Calandra; F. Manghi
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 343 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Compositional inhomogeneities of (Si,Ge) single crystals grown by the radio frequency (RF) heated float zone technique have been studied using the back-scattered electron (BSE) mode of a scanning electron microscope. Numerical analysis of the images by Fast Fourier Transformation (FFT) showed that t
Persistent zones of plastic strain localization (PSBs) can be observed in fatigued fcc monocrystals above the "nucleation cycle number" N, and the "nucleation stress" amplitude t,, respectively. They follow after temporary strain localizations existing a t N < N, and being discernible by oscillation