Microelectronic Devices and Circuits (MCGRAW HILL SERIES IN ELECTRICAL AND COMPUTER ENGINEERING)

✍ Scribed by Clifton Fonstad

• Publisher: McGraw-Hill Inc.,US
• Year: 1994
• Tongue: English
• Leaves: 699
• Category: Library

✦ Synopsis

Combining solid state devices with electronic circuits for an introductory-level microelectronics course, this textbook offers an integrated approach so that students can truly understand how a circuit works. A concise writing style is employed, with the right level of detail and physics to help students understand how a device works. Other features include an emphasis on modelling of electronic devices, and analysis of non-linear circuits. Spice problems, worked examples and end-of-chapter problems are included.

✦ Table of Contents

Preface
Contents
1 Modeling
1.1 General Comments
1.2 Empirical Device Models
1.3 Why Semiconductors? Why Transistors?
2 Uniform Semiconductors in Equilibrium
2.1 Thermal Equilibrium
2.2 Intrinsic Silicon
2.3 Extrinsic Silicon
2.3.1 Donors and Acceptors
2.3.2 Detailed Balance
2.3.3 Equilibrium Carrier Concentration
2.4 Additional Semiconductors
2.4.1 Elemental Semiconductors
2.4.2 Compound Semiconductors
2.5 The Effects of Changing Temperature
2.6 Summary
3 Uniform Excitation of Semiconductors
3.1 Uniform Electric Field: Drift
3.1.1 Drift Motion and Mobility
3.1.2 Drift Current and Conductivity
3.1.3 Temperature Variation of Mobilityand Conductivity
3.2 Uniform Optical Excitation
3.2.1 Minority Carrier Lifetime
3.2.2 Population Transients
3.2.3 High-Level Injection Populations and Transients
3.3 Photoconductivity and Photoconductors
3.3.1 Basic Concepts
3.3.2 Specific Device Issues
3.4 Summary
4 Nonuniform Situations: The Five Basic Equations
4.1 Diffusion
4.1.1 A Model for Diffusion
4.1.2 Diffusion Current Density
4.1.3 Other Diffusion Important in Devices
4.2 Modeling Nonuniform Situations
4.2.1 Total Current Densities
4.2.2 The Continuity Equations
4.2.3 Gauss's Law
4.2.4 The Five Basic Equations
4.3 Summary
5 Nonuniform Carrier Injection: Flow Problems
5.1 Developing the Diffusion Equation
5.1.1 Uniformly Doped Extrinsic Material
5.1.2 Low-Level Injection
5.1.3 Quasineutrality
5.1.4 Minority Carriers Flow by Diffusion
5.1.5 Time-Dependent Diffusion Equation
5.1.6 Quasistatic Diffusion: Flow Problems
5.2 Flow Problems
5.2.1 Homogeneous Solutions
5.2.2 Particular Solutions
5.2.3 Boundary Conditions
5.2.4 The Total Current
5.2.5 Specific Situations
5.2.6 The Currents Electric Field and Net Charge
5.3 Summary
6 Nonuniformly Doped Semiconductors in Thermal Equilibrium
6.1 General Description: The Poisson-Boltzmann Equation
6.2 Gradual Spatial Variation of Doping
6.3 p-n Junction: The Depletion Approximation
6.3.1 Abrupt p-n Junction
6.3.2 Other p-n Junction Profiles
6.4 The Electrostatic Potential around a Circuit
6.5 Summary
7 Junction Diodes
7.1 Applying Voltage to a p-n Junction
7.2 Depletion Region Changes
7.2.1 Depletion Width Variation with Voltage
7.2.2 Depletion Capacitance
7.2.3 Applications of the Depletion Capacitance
7.3 Current Flow
7.3.1 Excess Populations at the Depletion Region Edges
7.3.2 Current-Voltage Relationship for an Ideal Diode
7.3.3 Limitations to the Simple Model
7.3.4 Diffusion Capacitance
7.4 Circuit Models for Junction Diodes
7.4.1 Large-Signal Models
7.4.2 Static Small-Signal Linear Models
7.5 Solar Cells and Photodiodes
7.5.1 Optical Excitation of p-n Diodes
7.5.2 Applications of Illuminated p-n Diodes
7.6 Light-Emitting Diodes
7.7 Summary
8 Bipolar Junction Transistors
8.1 One-Dimensional BJTs
8.1.1 Superposition
8.1.2 The Forward Portion (vbc=0)
8.1.3 The Reverse Portion (vbe=0)
8.1.4 Full Solution: The Ebers-Moll Model
8.1.5 Characteristics and Operating Regions
8.1.6 Basic Transistor Design
8.1.7 Beyond Ebers-Moll: Limitations of the Model
8.2 Circuit Models for Bipolar Junction Transistors
8.2.1 Large-Signal Models
8.2.2 Static Small-Signal Linear Models
8.2.3 Dynamic Small-Signal Transistor Models
8.3 Phototransistors
8.4 Summary
9 The MOS Capacitor
9.1 The MOS Capacitor in Thermal Equilibrium
9.2 Isolated MOS Capacitor with Applied Voltage
9.2.1 Flat-band
9.2.2 Accumulation
9.2.3 Depletion
9.2.4 Threshold and Inversion
9.3 Biased MOS Capacitor with Contact to the Channel
9.3.1 Direct Contact to the Channel
9.3.2 Adjacent p-n Junction
9.4 Capacitance of MOS Capacitors versus Bias
9.5 Ions and Interface Charges in MOS Structures
9.5.1 Interface Charge
9.5.2 Oxide Charge
9.6 Types of MOS Capacitors
9.6.1 n-channel p-type Si
9.6.2 p-channel n-type Si
9.7 Summary
10 Field Effect Transistors
10.1 Metal-Oxide-Semiconductor Field Effect Transistors
10.1.1 Approximation
10.1.2 Static Small-Signal Linear Model
10.2 Junction Field Effect Transistors
10.2.1 Large-Signal Model
10.2.2 Static Small-Signal Linear Model
10.2.3 High-Frequency Small-Signal Model
10.3 Metal-Semiconductor Field Effect Transistors
10.3.1 Basic Concept and Modeling
10.3.2 Velocity Saturation in MESFETs
10.4 Summary
11 Single-Transistor Linear Amplifier Stages
11.1 Biasing Transistors
11.1.1 Bipolar Transistor Biasing
11.1.2 Field-Effect Transistor Biasing
11.2 The Concept of Mid-band
11.3 Single-Bipolar-Transistor Amplifiers
11.3.1 Common-Emitter Stage
11.3.2 Degenerate-Emitter Stage
11.3.3 Common-Base Stage
11.3.4 Emitter-Follower Stage
11.4 Single Field Effect Transistor Amplifiers
11.4.1 Common-Source Stage
11.4.2 Degenerate-source
11.4.3 Common-gate
11.4.4 Source-follower
11.5 Summary
12 Differential Amplifier Stages
12.1 Basic Topology
12.2 Large-Signal Analysis
12.2.1 Bipolar Differential Amplifier Transfer Characteristic
12.2.2 MOSFET Differential Amplifier Transfer Characteristic
12.2.3 Difference and Common Mode Inputs
12.3 Small-Signal Linear Analysis
12.3.1 Half-Circuit Techniques
12.3.2 Difference and Common Mode Voltage Gains
12.3.3 Current Gains
12.3.4 Input and Output Resistances
12.4 Outputs Current Mirrors and Active Loads
12.5 Current Source Designs
12.5.1 Bipolar Current Sources
12.5.2 MOSFET Current Sources
12.6 Summary
13 Multistage Amplifiers
13.1 Capacitavely Coupled Cascade
13.2 Direct-Coupled Amplifiers
13.2.1 Direct-Coupled Cascade
13.2.2 Cascode
13.2.3 Darlington
13.2.4 Emitter/Source-Coupled Cascode
13.2.5 Complementary Output
13.3 Multistage Differential Amplifiers
13.4 A Design Exercise: A Basic npn Op-Amp
13.4.1 The Parts
13.4.2 The Whole
13.5 Beyond Basic: Design with BiCMOS
13.5.1 Darlington Second Stage
13.5.2 p-MOS Current Mirror and Second Stage
13.6 Summary
14 High-Frequency Analysis of Linear Amplifiers
14.1 Determining the Bounds of the Mid-Band Range
14.1.1 Method of Open-circuit Time Constants
14.1.2 Method of Short-circuit Time Constants
14.2 Examination of Specific Circuit Topologies
14.2.1 Common-Emitter/Source
14.2.2 The Miller Effect
14.2.3 Degenerate-Emitter/Source
14.2.4 Emitter/Source-Follower
14.2.5 Common-Base/Gate
14.2.6 Cascode
14.2.7 Darlington Pair
14.3 Intrinsic High-Frequency Limits of Transistors
14.3.1 Bipolar Transistors
14.3.2 Field Effect Transistors
14.4 Summary
15 Digital Building-Block Circuits
15.1 Generic Binary Logic Circuits
15.1.1 Generic Inverter
15.1.2 Realizing Logic Functions with Inverters
15.1.3 Objectives in Inverter Design
15.1.4 Determining the Transfer Characteristic
15.2 MOSFET Logic
15.2.1 Resistor Load
15.2.2 Enhancement Mode Loads
15.2.3 Depletion Mode Load: n-MOS
15.2.4 Complementary Load: CMOS
15.3 Bipolar Inverters
15.3.1 The Simple Bipolar Inverter
15.3.2 Transistor-Transistor Logic: TTL
15.3.3 Emitter-Coupled Logic: ECL
15.4 Memory Cells
15.4.1 Static Memory Cells
15.4.2 Dynamic Memory Cells
15.5 Summary
16 Switching Transients in Devices and Circuits
16.1 General Techniques
16.2 Turning Devices On and Off
16.2.1 Bipolar Junction Devices
16.2.2 Field Effect Devices
16.3 Inverter Switching Times and Gate Delays
16.3.1 CMOS and Other MOSFET Inverters
16.3.2 TTL and ECL Gates
16.3.3 Device and Circuit Scaling
16.4 Summary
Seeing Holes and Electrons
Appendicies
A Some Representative Properties of Common Senliconductors
B Seeing holes and electrons
B.1 Hot Point Probe Measurement
B.2 Hall Effect Measurement
C Some Important Concepts of Solid-state Physics
C.1 Energy Bands
C.2 Effective Mass Theory
D Quantifying the Tendency to Quasineutrality
D.1 Uniform Time-varping Excitation: TD
D.2 Non-uniform Static Excitation: LD
E Metal-Semiconductor Contacts and Devices
E.1 The Metal-Semiconductor Junction in Thermal Equilibrium
E.2 Reverse Biased Metal-Semiconductor Junctions
E.3 Forward Bias and Currents
E.4 Schottky Diodes
E.5 Ohmic Contacts
G Integrated Circuit Fabrication
G.1 Elements of Semiconductor Processing
G 1.1 Crystal Growth
G.1.2 Doping
G 1.3 Encapsulation
G 1.4 Microlithography
G 1.5 Metallization
G.1.6 Etching and Cleaning
G.2 Examples of Integrated Circuit Processes
G.2.1 p-n Junction Isolated Bipolar IC Technology
G.2.2 Dielectrically Isolated Bipolar Technologies
G.2.3 Silicon-Gate nMOS Processing
G.2.4 A Silicon-Gate CMOS Process
G.2.5 BiCMOS
G.2.6 Digital Logic Process
Index