Microcavity effects in ensembles of silicon quantum dots coupled to high-Q resonators
β Scribed by Bianucci, Pablo ;Zhi, Yanyan ;Marsiglio, Frank ;Silverstone, Josh ;Meldrum, Al
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 443 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
Transport of electrons in semiconductor nano-structures exhibits many features that are a consequence of quantum confinement and Coulomb blockade. A quantum dot coupled to a metal-oxide-semiconductor transistor's channel region is one example of such a structure with utility as a dense semiconductor
The in uence of the direct and exchange Coulomb interaction on Landau level formation in strain-induced quantum dots (QD) has been studied by high-ΓΏeld (45 T) magneto-luminescence and by many-electron-many-hole Hartree-Fock calculations. The Darwin-Fock states of the dots are found to merge into a s