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Micro-structured integrated electro-optic LiNbO3 modulators

✍ Scribed by D. Janner; D. Tulli; M. García-Granda; M. Belmonte; V. Pruneri

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
633 KB
Volume
3
Category
Article
ISSN
1863-8880

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✦ Synopsis

Abstract

In this paper, we will review the state‐of‐the‐art of LiNbO~3~ based integrated electro‐optic modulators and will show how micro‐structuring techniques such as etching, domain inversion and thin film processing can be used to realize new configurations which can take the performance to unprecedented levels. In particular, we will review recent results on the use of domain inversion on a micron scale and we report on the fabrication of a chirp‐free modulator having ∼ 2 V switching voltage and bandwidth of 15 GHz designed by placing the waveguide arms of the Mach‐Zehnder interferometer in opposite domain oriented regions. We also review some of the new modulation formats (e.g. DQPSK) that can represent an application development of the presented micro‐structured devices. Finally, we address the issue of the integration of the modulator chip in a transmitter board comprising tunable laser, bias‐control electronics and RF driver. The requirements of integration can even push further the reduction in size of modulator chips, thus making more crucial the use of micro‐ and nano‐structuring techniques.

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as 1 y 2 ) 0. Thus for the first medium the surface Ž . impedance 36 equals x and analogously for the second one see 37 Ž . Substituting A2 and A3 in 39 , we finally obtain w x From Eq. A4 two well-known consequences follow 4 : First, in order that a surface wave exist, one of the values or Ј mus