𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Micro-structural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes

✍ Scribed by Kumar, Ashish; Vinayak, Seema; Singh, R.

Book ID
120526187
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
777 KB
Volume
13
Category
Article
ISSN
1567-1739

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural and electrical properties of
Structural and electrical properties of Mo/n-GaN Schottky diodes
✍ Reddy, V. Rajagopal ;Ramesh, C. K. ;Choi, Chel-Jong 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 286 KB

## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to n‐type GaN (4.07 × 10^18^ cm^–3^) have been investigated before and after annealing at 600 °C. Measurements show that the Schottky barrier height of the as‐deposited sample was 0.81 eV (__I__–__V__) and 1.02