Characterization of free standing GaN gr
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Wang, Lijun ;Zeimer, U. ;Richter, E. ;Hennig, Ch. ;Herms, M. ;Weyers, M.
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Article
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2006
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John Wiley and Sons
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English
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## Abstract A 230 ยตm thick free standing GaN layer has been grown on a LiAlO~2~ substrate by hydride vapor phase epitaxy, with the separation of the layer from the substrate occuring spontaneously during cooling down after growth. A strong green luminescence band is observed from the top surface, w