Multilayer thin films were grown sequentially by evaporating solid antimony (III) telluride and bismuth (III) telluride as thermoelectric (TE) materials. The grown multilayer films have a periodic structure consisting of eleven or thirty-nine alternating thin film layers where each layer is 10 nm th
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MeV Si ion bombardments of thermoelectric BixTe3/Sb2Te3 multilayer thin films for reducing thermal conductivity
โ Scribed by Z. Xiao; R.L. Zimmerman; L.R. Holland; B. Zheng; C.I. Muntele; D. Ila
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 208 KB
- Volume
- 241
- Category
- Article
- ISSN
- 0168-583X
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In order to keep the stoichiometry of Bi 2 Te 3 and Sb 2 Te 3 , with the purpose of preserving the electrical and thermal conductivity advantage of the layered structure of bulk Bi 2 Te 3 and Sb 2 Te 3 in each period of the superlattice, magnetron sputtering, which is operated at relatively low temp