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MeV-boron implanted layer, oxygen precipitates and poly-silicon back side combined in one silicon wafer: at what defect will Cu and Ni be gettered?

✍ Scribed by R. Hölzl; L. Fabry; K.-J. Range; R. Pech


Publisher
Springer
Year
2002
Tongue
English
Weight
243 KB
Volume
74
Category
Article
ISSN
1432-0630

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