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โœฆ   LIBER   โœฆ

๐Ÿ“

Metrology and diagnostic techniques for nanoelectronics

โœ Scribed by Ma, Zhiyong; Seiler, David G


Publisher
Pan Stanford Publishing
Year
2017
Tongue
English
Leaves
1454
Category
Library

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โœฆ Synopsis


This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product Read more...


Abstract: This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging. - Provided by the publisher

โœฆ Table of Contents


Content: Model-based scanning electron microscopy critical-dimension metrology for 3D nanostructures --
X-ray metrology for semiconductor fabrication --
Advancements in ellipsometric and scatteronmetric analysis --
3D-AFM measurements for semiconductor structures and devices --
SIMS analysis on the transistor scale: probing composition and dopants in nonplanar, confined 3D volumes --
Transistor strain measurement techniques and their applications --
Scanning spreading resistance microscopy (SSRM): high-resolution 2D and 3D carrier mapping of semiconductor nanostructures --
Microstructure characterization of nanoscale materials and interconnects --
Characterization of the chemistry and mechanical properties of interconnect materials and interfaces: impact on interconnect reliability --
Characterization of plasma damage for low-k dielectric films --
Defect characterization and metrology --
3D electron tomography for nanostructures --
Electron energy loss spectroscopy of semiconductor nanostructures and oxides --
Atom probe tomography of semiconductor nanostructures --
Characterization and metrology for graphene materials, structures, and devices --
Characterization of magnetic nanostructures for spin-torque memory applications with marco- and microscale ferromagnetic resonance --
Band alignment measurement by internal photoemission spectroscopy --
Electrical characterization of nanoscale transistors: emphasis on traps associated with MOS gate stacks --
Charge pumping for reliability characterization and testing of nanoelectronic devices --
Application of in situ resistance and nanocalorimetry measurements for nanoelectroinc thin-film materials --
Methodology and challenges in characterization of 3D package interconnection materials and processes --
3D interconnect characterization using raman spectroscopy --
Advances in 3D interconnect characterization techniques for fault isolation and defect imaging --
Optical and electrical nanoprobing for circuit diagnostics --
Automated tools for methods for debug and diagnosis.

โœฆ Subjects


Nanoelectronics;Metrology;TECHNOLOGY & ENGINEERING;Mechanical


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