Method of calculating the distributed and lumped components of the resistance in solar cells

✍ Scribed by V.D. Rumyantsev; J.A. Rodriguez

• Publisher: Elsevier Science
• Year: 1990
• Weight: 543 KB
• Volume: 28
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(90)90058-d

✦ Synopsis

A method of calculating the distributed (sheet) component of resistance Rsh and lumped (contact) component of the resistance Rc in rectangular solar cells with busbar contacts is proposed. The I-V curve of the device is taken at a given light intensity. The I-V characteristic of the p-n junction is constructed from measured Iph--Vo~ values at reduced light intensities. A "working curve" is constructed taking the voltage differences between these curves at the same current value. The influence of the increase on the radiation intensity over the shape of the working curve is analysed. If the incident light intensity is high enough, the slope of the working curve 1 chord is related to ~R~h + Rc, whereas the slope of the tangent to the working curve at Iph level is related to Rsh + Re. In theory the solar cell is taken as a chain of n diode generators and resistors. Theoretical calculations were verified for GaAs and silicon devices, for which Rsh and Rc values were measured independently by the four-probe method.