Thermally activated de-excitation of the
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P. Trautman; M. Kamińska; J. M. Baranowski
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Article
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1988
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John Wiley and Sons
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English
⚖ 265 KB
Measurements of absorption in the near infrared have been performed on n-type and undoped semi-insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 pm light illumination when the crystal was cooled to helium temperatures. Meas