Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and 350-GHz fmax with 160-GHz fT
✍ Scribed by M. Chertouk; H. Heiss; D. Xu; S. Kraus; W. Klein; G. Böhm; G. Tränkle; G. Weimann
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 344 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
log MFyj ' % 0.a dB 5.0 log -dB/ s a.m dB 10.0 d&l STWT 7!5.-GHz STOP 103.239935 ¶~@k Figure 9 Measured input (lSlll) and output (lS221) return loss and forward (IS2, 1 ) and feedback transmission for the 77-GHz amplifier as a function of frequency
waveguides as the transmission media. Therefore we needed no substrate thinning, no backside metallization, and no via holes, which led to a low-cost circuit fabrication.
Good agreement between measured and simulated data for the 60-GHz amplifier verifies both the HEMT and the circuit modeling. This amplifier reaches a gain of 15 dB and an input and output matching better than -8 dB at 60 GHz. To our knowledge this is the first CPW-V-band amplifier realized on this material system, and it is comparable to the best published values for such a circuit [71. For the 77-GHz amplifier we measured a gain of 15 dB and an input and output matching better than -8 dB at 77 GHz.