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Metamorphic In0.27Ga0.73AsIn0.25Al0.75As HEMT on GaAs: MBE growth and device performance

โœ Scribed by P. Win; Y. Cordier; Y. Druelle; C. Bouillet; J. Favre; A. Cappy


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
211 KB
Volume
19
Category
Article
ISSN
0167-9317

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