Metamorphic In0.27Ga0.73AsIn0.25Al0.75As HEMT on GaAs: MBE growth and device performance

✍ Scribed by P. Win; Y. Cordier; Y. Druelle; C. Bouillet; J. Favre; A. Cappy

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 211 KB
• Volume: 19
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/0167-9317(92)90445-w